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BCX70K データシート(PDF) 3 Page - Siemens Semiconductor Group |
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BCX70K データシート(HTML) 3 Page - Siemens Semiconductor Group |
3 / 9 page Semiconductor Group 3 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. V Collector-emitter breakdown voltage IC = 10 mA BCW 60, BCW 60 FF BCX 70 V(BR)CE0 32 45 – – – – nA nA µA µA Collector cutoff current VCB = 32 V BCW 60, BCW 60 FF VCB = 45 V BCX 70 VCB = 32 V, TA = 150 ˚C BCW 60, BCW 60 FF VCB = 45 V, TA = 150 ˚C BCX 70 ICB0 – – – – – – – – 20 20 20 20 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10 µA BCW 60, BCW 60 FF BCX 70 V(BR)CB0 32 45 – – – – Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 5–– – DC current gain 1) IC = 10 µA, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 2 mA, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 50 mA, VCE = 1 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K hFE 20 20 40 100 120 180 250 380 50 70 90 100 140 200 300 460 170 250 350 500 – – – – – – – – 220 310 460 630 – – – – nA Emitter cutoff current VEB = 4 V IEB0 ––20 1) Pulse test: t ≤ 300 µs, D ≤ 2%. BCW 60 BCX 70 |
同様の部品番号 - BCX70K |
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同様の説明 - BCX70K |
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