BCX71K datasheet(3/9 Pages) SIEMENS

部品番号	BCX71K

部品情報	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)

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BCW 61

BCX 71

Semiconductor Group

3

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

V

Collector-emitter breakdown voltage

IC = 10 mA

BCW 61, BCW 61 FF

BCX 71

V(BR)CE0

32

45

–

nA

µA

Collector cutoff current

VCB = 32 V

BCW 61, BCW 61 FF

VCB = 45 V

BCX 71

VCB = 32 V, TA = 150 ˚C BCW 61, BCW 61 FF

VCB = 45 V, TA = 150 ˚C BCX 71

ICB0

–

20

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 10

µA

BCW 61, BCW 61 FF

BCX 71

V(BR)CB0

32

45

–

Emitter-base breakdown voltage

IE = 1

µA

V(BR)EB0

5––

–

DC current gain 1)

IC = 10

µA, VCE = 5 V

BCW 61 A, BCX 71 G

BCW 61 B, BCX 71 H

BCW 61 FF, BCW 61 C, BCX 71 J

BCW 61 FN, BCW 61 D, BCX 71 K

IC = 2 mA, VCE = 5 V

BCW 61 A, BCX 71 G

BCW 61 B, BCX 71 H

BCW 61 FF, BCW 61 C, BCX 71 J

BCW 61 FN, BCW 61 D, BCX 71 K

IC = 50 mA, VCE = 1 V

BCW 61 A, BCX 71 G

BCW 61 B, BCX 71 H

BCW 61 FF, BCW 61 C, BCX 71 J

BCW 61 FN, BCW 61 D, BCX 71 K

hFE

20

30

40

100

120

180

250

380

60

80

100

110

140

200

300

460

170

250

350

500

–

220

310

460

630

–

nA

Emitter cutoff current

VEB = 4 V

IEB0

––20

1)

Pulse test: t

≤ 300 µs, D ≤ 2%.

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