2SC1815LT1 datasheet(1/2 Pages) TGS

部品番号	2SC1815LT1

部品情報	SOT-23 Plastic-Encapsulate Transistors (NPN)

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メーカー	TGS [Tiger Electronic Co.,Ltd]

ホームページ	http://www.tgselec.com

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SOT-23

Plastic-Encapsulate Transistors

2SC1815LT1 TRANSISTOR (NPN)

FEATURES

Power dissipation

MARKING : C1815=HF

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

200

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100uA,

IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 0.1mA, IB=0

50

V

Collector cut-off current

ICEO

VCE=50V, IB=0

0.1

uA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

uA

DC current gain

hFE

VCE= 6V, IC= 2mA

130

400

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB= 10mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB= 10mA

1

V

Transition frequency

fT

VCE=10V, IC= 1mA,

f=30MHz

80

MHz

CLASSIFICATION

OF

hFE

Rank

L

H

Range

130-200

200-400

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

Collector cut-off current

ICBO

VCB=60V, IE=0

0.1

uA

TIGER ELECTRONIC CO.,LTD

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