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2SC1815LT1 データシート(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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2SC1815LT1 データシート(HTML) 1 Page - Tiger Electronic Co.,Ltd |
1 / 2 page SOT-23 Plastic-Encapsulate Transistors 2SC1815LT1 TRANSISTOR (NPN) FEATURES Power dissipation MARKING : C1815=HF MAXIMUM RATINGS (TA=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA DC current gain hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V Transition frequency fT VCE=10V, IC= 1mA, f=30MHz 80 MHz CLASSIFICATION OF hFE Rank L H Range 130-200 200-400 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA TIGER ELECTRONIC CO.,LTD |
同様の部品番号 - 2SC1815LT1 |
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同様の説明 - 2SC1815LT1 |
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