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FQP1N60 データシート(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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FQP1N60 データシート(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 1 page TO-220 Parameter Symbol Value Unit Drain-Source Voltage VDSS 600 V Drain Current - Continuous ID 1.0 A Drain Current - Pulsed IDM 3.0 A Gate-Source Voltage VGSS ±30 V Power Dissipation PD 34 W Max. Operating Junction Temperature Tj 150 oC Storage Temperature Tstg -55~150 oC FQP1N60 DESCRIPTION Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID =250μA 600 — — V Zero Gate Voltage Drain Current IDSS VDS =600V, VGS =0V — — 1.0 uA Gate-Body Leakage Current, Forward IGSSF VGS =30V, VDS =0V — — 100 uA Gate-Body Leakage Current, Reverse IGSSR VGS = -30V, VDS =0V — — -100 uA Gate Threshold Voltage VGS(th) VDS = VGS , ID =250μA 2.0 — 4.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 0.5 A — 9.7 12 W Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 1.0 A — — 1.4 V 600V N-Channel MOSFET Product specification ’ These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O ( Ta = 25 C) O TIGER ELECTRONIC CO.,LTD |
同様の部品番号 - FQP1N60 |
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同様の説明 - FQP1N60 |
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