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LA5735MC データシート(PDF) 2 Page - Sanyo Semicon Device |
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LA5735MC データシート(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page LA5735MC No.A2022-2/6 Electrical Characteristics at Ta = 25°C, VIN = 15V Parameter Symbol Conditions Ratings Unit min typ max Reference voltage VOS IO = 0.3A 1.20 1.23 1.26 V Reference pin bias current IFB 1 2 μA Switching frequency fosc 240 300 360 kHz Short-circuit protection circuit operating switching frequency fscp 15 kHz Saturation voltage Vsat IOUT = 0.3A, VOS = 0V 1 1.15 V Maximum on duty D max VOS = 0V 100 % Minimum on duty D min VOS = 5V 0 % Output leakage current Ilk SWOUT = -0.4V 200 μA Supply current Iin VOS = 2V 5 10 mA Current limiter operating current IS 0.7 A Thermal shutdown operating temperature TSD Designed target value. * 165 °C Thermal shutdown Hysteresis width ΔTSD Designed target value. * 15 °C * Design target value : Design guarantee values are replaced with electrical measurements, and are not measured by temperature. Package Dimensions unit : mm (typ) 3424 Pd max -- Ta 0 0.2 0.4 0.6 0.8 1 --30 0 30 60 0.15 150 90 120 0.75 Ambient temperature, Ta - C Mounted on a board Designated board : 114.3 ×76.1×1.6mm3 glass epoxy SANYO : SOIC8 4.9 12 8 0.2 0.42 1.27 |
同様の部品番号 - LA5735MC |
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同様の説明 - LA5735MC |
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