NE3509M14 datasheet(4/12 Pages) RENESAS

部品番号	NE3509M14

部品情報	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier

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メーカー	RENESAS [Renesas Technology Corp]

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NE3509M14

R09DS0011EJ0100 Rev.1.00

Page 4 of 10

Jan 21, 2011

Frequency f (GHz)

MAG, MSG, K FACTOR vs. FREQUENCY

25

20

15

10

5

0

5

10

15

20

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

MAG

MSG

K factor

VDS = 2 V,

ID = 10 mA

Frequency f (GHz)

INSERTION POWER GAIN, ISOLATION

vs. FREQUENCY

0

–5

–10

–15

–20

–25

25

20

15

10

5

0

5

10

15

20

VDS = 2 V,

ID = 10 mA

|S21|

2

|S12|

2

Remark The graphs indicate nominal characteristics.

同様の部品番号 - NE3509M14

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	NE3509M14	219Kb / 12P	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier

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同様の説明 - NE3509M14

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	NE3509M14	219Kb / 12P	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
Renesas Technology Corp	NE3519M04	226Kb / 13P	N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
California Eastern Labs	NE3509M04	284Kb / 9P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3510M04	216Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3508M04	213Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE34018	114Kb / 16P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE3509M04	1Mb / 11P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M04	217Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE33284A	62Kb / 10P	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE434S01	77Kb / 12P	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET