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AM20N10-350D データシート(PDF) 1 Page - Analog Power |
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AM20N10-350D データシート(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM20N10-350D N-Channel 100-V (D-S) MOSFET VDS (V) ID(A) 9.0 8.6 Symbol Limit Units VDS 100 VGS ±20 Continuous Drain Current a TA=25°C ID 9.0 IDM 50 IS 33.6 A Power Dissipation a TA=25°C PD 50 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage PRODUCT SUMMARY 100 rDS(on) (mΩ) 420 @ VGS = 10V 460 @ VGS = 5.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM20N10-350D_1A |
同様の部品番号 - AM20N10-350D |
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同様の説明 - AM20N10-350D |
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