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AM1400NE データシート(PDF) 1 Page - Analog Power |
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AM1400NE データシート(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM1400NE N-Channel 150-V (D-S) MOSFET VDS (V) ID(A) 1 0.9 Symbol Limit Units VDS 150 VGS ±20 TA=25°C 1 TA=70°C 0.7 IDM 10 IS 1.7 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Gate-Source Voltage V Parameter Drain-Source Voltage PRODUCT SUMMARY 150 rDS(on) (mΩ) 1100 @ VGS = 10V 1200 @ VGS = 4.5V Maximum Junction-to-Ambient a Continuous Drain Current a Power Dissipation a t <= 10 sec Steady State RθJA Pulsed Drain Current b Continuous Source Current (Diode Conduction) a ID A PD W THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM1400NE_1A |
同様の部品番号 - AM1400NE |
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同様の説明 - AM1400NE |
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