6N60ZL-TF3-T datasheet(3/6 Pages) UTC

3 / 6 page

6N60Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-741.a

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 6.2 A

1.4

V

Maximum Continuous Drain-Source Diode

Forward Current

IS

6.2

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

24.8

A

Reverse Recovery Time

trr

VGS = 0 V, IS = 6.2 A,

dIF/dt = 100 A/μs (Note 1)

290

ns

Reverse Recovery Charge

QRR

2.35

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

同様の部品番号 - 6N60ZL-TF3-T

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	6N60ZL-TF3-T	226Kb / 6P	N-CHANNEL POWER MOSFET

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