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6N60ZL-TF3-T データシート(PDF) 3 Page - Unisonic Technologies |
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6N60ZL-TF3-T データシート(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 6N60Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-741.a ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 6.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 24.8 A Reverse Recovery Time trr VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/μs (Note 1) 290 ns Reverse Recovery Charge QRR 2.35 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
同様の部品番号 - 6N60ZL-TF3-T |
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同様の説明 - 6N60ZL-TF3-T |
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