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6N80G-TA3-T データシート(PDF) 2 Page - Unisonic Technologies |
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6N80G-TA3-T データシート(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-500.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous ID 6 A Drain Current (Note 1) Pulsed IDM 22 A Single Pulsed (Note 2) EAS 680 mJ Avalanche Energy Repetitive (Note 1) EAR 15.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 138 W Power Dissipation TO-220F/TO-220F1 PD 51 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 37mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W TO-220 0.9 °C/W Junction to Case TO-220F/TO-220F1 θJC 2.45 °C/W |
同様の部品番号 - 6N80G-TA3-T |
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同様の説明 - 6N80G-TA3-T |
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