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AZV832M-G1 データシート(PDF) 7 Page - BCD Semiconductor Manufacturing Limited |
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AZV832M-G1 データシート(HTML) 7 Page - BCD Semiconductor Manufacturing Limited |
7 / 24 page Advance Datasheet Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers Nov. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 7 AZV832 3.0V DC Electrical Characteristics VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Conditions Min Typ Max Unit Input Offset Voltage VOS 0.5 2.5 mV Input Bias Current IB 1.0 5.0 pA Input Offset Current IOS 2.0 pA Input Common-mode Voltage Range VCM -0.3 3.3 V VCM=-0.3V to 1.9V 62 80 Common-mode Rejection Ratio CMRR VCM=-0.3V to 3.3V 58 75 dB RL=1kΩ connect to VCC/2, VO=0.2V to 2.8V 90 110 Large Signal Voltage Gain GV RL=10kΩ connect to VCC/2, VO=0.1V to 2.9V 95 115 dB Input Offset Voltage Drift ∆VOS/∆T 2.0 µV/ °C VIN=0.5V, RL=1kΩ connect to VCC/2 20 50 Output Voltage Swing from Rail VOL/VOH VIN=0.5V, RL=10kΩ connect to VCC/2 3 15 mV Sink ISINK VOUT=VCC 50 60 Output Current Source ISOURCE VOUT=0V 50 65 mA Closed-loop Output Impedance ZOUT f=10kHz, G=1 (Note 2) 9 Ω Power Supply Rejection Ratio PSRR VCC=1.6V to 5.0V, VCM=0.5V 70 80 dB Supply Current ICC VCM<VCC-1V, IOUT=0 140 180 µA 3.0V AC Electrical Characteristics VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted. Parameter Symbol Conditions Min Typ Max Unit Gain Bandwidth Product GBP RL=100kΩ 1.0 MHz Slew Rate SR G=1, 2V Step, CL=100pF, RL=10kΩ 0.40 V/µs Phase Margin φM RL=100kΩ 67 Degrees Total Harmonic Distortion+Noise THD+N f=1kHz, G=1, VIN=1Vpp RL=10kΩ, CL=100pF -70 dB Voltage Noise Density en f=1kHz 27 Hz nV/ Note 2: G is Closed-Loop Voltage Gain. |
同様の部品番号 - AZV832M-G1 |
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同様の説明 - AZV832M-G1 |
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