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UF1010AG-TA3-T データシート(PDF) 2 Page - Unisonic Technologies

部品番号 UF1010AG-TA3-T
部品情報  N-CHANNEL POWER MOSFET
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF1010AG-TA3-T データシート(HTML) 2 Page - Unisonic Technologies

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UF1010A
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-582.A
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
VGSS
±20
V
Continuous (VGS=10V)
ID
84
Drain Current
Pulsed (Note 2)
IDM
330
A
Avalanche Current (Note 2)
IAR
50
A
Repetitive (Note 2)
EAR
17
mJ
Avalanche Energy
Single Pulsed (Note3)
EAS
1180
mJ
Power Dissipation (TC=25°C)
PD
200
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=260μH, RG=25Ω, IAS=50A
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
°C/W
Junction to Case
θJc
0.75
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=250μA
60
V
VDS=60 V, VGS=0 V
25
μA
Drain-Source Leakage Current
IDSS
VDS=48 V, VGS=0 V,TJ=150°C
250
μA
Gate-Source Leakage Current
IGSS
VGS=±20 V, VDS=0 V
±100
nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA
0.064
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
4.0
V
Static Drain-Source On Resistance(Note)
RDS(ON)
VGS=10 V, ID=50A
12
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
3210
pF
Output Capacitance
COSS
690
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0 V, f=1MHz
140
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
130
nC
Gate-to-Source Charge
QGS
28
nC
Gate-to-Drain ("Miller") Charge
QGD
ID =50A, VDS =48V,VGS =10V
44
nC
Turn ON Delay Time
tD(ON)
12
ns
Turn ON Rise Time
tR
78
ns
Turn OFF Delay Time
tD(OFF)
48
ns
Turn OFF Fall Time
tF
VDD =30V, ID =50A, RG =3.6Ω
VGS = 10V
53
ns
Internal Drain Inductance
LD
4.5
nH
Internal Source Inductance
LS
7.5
nH
Diode Forward Voltage
VSD
TJ = 25°C, IS = 50A, VGS = 0V
1.3
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
84
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
330
A
Reverse Recovery Time
tRR
73
110
ns
Reverse Recovery Charge
QRR
TJ=25°C, IF=50A,
di/dt=100A/μs
220
330
nC
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.


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