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UFZ44 データシート(PDF) 2 Page - Unisonic Technologies |
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UFZ44 データシート(HTML) 2 Page - Unisonic Technologies |
2 / 7 page UFZ44 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 7 www.unisonic.com.tw QW-R502-515.a VER.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TC=25°C (Note 2) 50 A Continuous, VGS at 10V TC=100°C ID 36 A Drain Current Pulsed (Note 3) IDM 200 A Single Pulsed Avalanche Energy (Note 4) EAS 100 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns Power Dissipation TC=25°C PD 150 W Linear De-rating Factor 1.0 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current limited by the package, (die current = 51 A). 3. Repetitive rating; pulse width limited by maximum junction temperature. 4. VDD = 25 V, starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A. 5. ISD ≤51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJC 1.0 °C/W |
同様の部品番号 - UFZ44 |
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同様の説明 - UFZ44 |
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