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MC20XS4200 データシート(PDF) 9 Page - Freescale Semiconductor, Inc |
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MC20XS4200 データシート(HTML) 9 Page - Freescale Semiconductor, Inc |
9 / 60 page Analog Integrated Circuit Device Data Freescale Semiconductor 9 20XS4200 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) ON-Resistance, Drain-to-Source (IHS = 3.0 A, TJ = 25 °C) CSNS_ratio = 0 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)25_0 – – – – – – 20 20 20 m Ω ON-Resistance, Drain-to-Source (IHS = 1.0 A, TJ = 25 °C) CSNS_ratio = 1 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)25_1 – – – – – – 20 20 20 m Ω ON-Resistance, Drain-to-Source (IHS = 3.0 A,TJ = 150 °C) CSNS_ratio = 0 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)150_0 – – – – – – 36 36 36 m Ω ON-Resistance, Drain-to-Source (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = 1 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)150_1 – – – – – – 36 36 36 m Ω ON-Resistance, Drain-to-Source difference from one channel to the other in parallel mode (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = X ΔR DS(ON)150 -0.9 – +0.9 m Ω ON-Resistance, Source-Drain (IHS = -3.0 A, TJ = 150 °C, VPWR = - 24 V) RSD(ON)150 – – 36 m Ω Max. detectable wiring length (2.5 mm²) for severe short-circuit detection (see Severe Short-circuit Fault (latchable fault)): High slew rate selected Medium slew rate selected: Low slew rate selected: LSHORT 50 100 200 130 260 500 300 600 1200 cm Over-current Detection thresholds with CSNS_ratio bit = 0 (CSR0) I_OCH1_0 I_OCH2_0 I_OCM1_0 I_OCM2_0 I_OCL1_0 I_OCL2_0 I_OCL3_0 27.5 17.5 10.8 6.7 4.5 3.0 1.5 33.0 21.0 13.0 8.0 5.4 3.6 1.8 38.5 24.5 15.2 9.3 6.3 4.2 2.1 A Table 3. Static Electrical Characteristics (continued) Unless specified otherwise: 8.0 V ≤ V PWR ≤ 36 V, 3.0 V ≤ VDD ≤ 5.5 V, - 40 °C ≤ TA ≤ 125 °C, GND = 0 V. Typical values are average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise. Parameter Symbol Min Typ Max Unit |
同様の部品番号 - MC20XS4200 |
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同様の説明 - MC20XS4200 |
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