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FDDS10H04A_F085A データシート(PDF) 9 Page - Fairchild Semiconductor |
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FDDS10H04A_F085A データシート(HTML) 9 Page - Fairchild Semiconductor |
9 / 12 page 40/60/80V PowerTrench® MOSFeTs Mid-Voltage MOSFETs Enhance Synchronous Rectification in SMPS Designs Designers of AC-DC power systems need cost-effective power supply solutions that minimize board space while increasing efficiency and reducing power dissi- pation. Power density and light-load efficiency improvement are also key issues. Part of the expanded PowerTrench® MOSFET family, Fairchild’s newest mid-voltage power MOSFET portfolio of optimized power switches meets these needs. The family combines a small gate charge (Q g), a small reverse recovery charge (Q rr) and a soft-reverse recovery body diode, allowing for fast switch- ing speeds. Available in a 40V, 60V and 80V rating, these devices require less snubber circuitry due to an optimized soft-body diode that reduces voltage spikes by up to 15% over the competitor’s solution. The first devices available include the 40V FDMS015N04B and 80V FDMS039N08B available in a Power56 package, and the 60V FDP020N06B and 80V FDP027N08B available in a TO-220 3-lead package. Advantages • Smallerpackagesize (Power56andTO-2203-lead) withmaximumthermal performancetosystemsize • LowerQ gtoreducegate drivingloss • LowQ gd/Qgsratioto preventundesirableturn-on, improvingsystemreliability • Lowdynamicparasitic capacitancestoreducegate drivinglossforhigh- frequencyapplications Applications • Synchronousrectification forserver/telecomPSU • Batterychargerand batteryprotectioncircuit • DCmotordrivesand uninterruptiblepower supplies • Microsolarinverter For more information, please visit: fairchildsemi.com/products/mosfets/powertrench.html fairchildsemi.com/pf/FD/FDMS015N04B.html fairchildsemi.com/pf/FD/FDMS039N08B.html fairchildsemi.com/pf/FD/FDP020N06B.html fairchildsemi.com/pf/FD/FDP027N08B.html FDP027N08B Competitor A Test condition: V DD = 40V, Id = 50A, Vgs = 0V-10V 180 134.1 169.2 160 140 120 100 80 60 40 20 0 FDP027N08B Competitor B Test condition: V DD = 40V, Id = 50A, di/dt = 500A/s, TJ = 25°C 350 269.7 323.5 300 250 200 150 100 50 0 Benchmarking of Reduced Reverse Recovery Charge (Q rr) and Reduced Gate Charge (QG) Product Number B V (V) R DS(ON) (mΩ) Q g (nC) Package FDP020N06B 60 2 204 TO220 FDP027N08B 80 2.7 137 TO220 FDMS039N08B 80 3.9 77 PQFN56 FDMS015N04B 40 1.5 87 PQFN56 |
同様の部品番号 - FDDS10H04A_F085A |
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同様の説明 - FDDS10H04A_F085A |
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