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FMBT3904 データシート(PDF) 2 Page - Formosa MS |
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FMBT3904 データシート(HTML) 2 Page - Formosa MS |
2 / 11 page Package outline Page 2 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 200mA Silicon NPN Epitaxial Planar Transistor collector-emitterbreakdien voltage. (BV = 40V@I =1mA) S Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Features CEO C mall load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 225mW power dissipation. • Suffix "-H" indicates Halogen free part, ex. FMΒΤ3904-H. • • • • High PARAMETER Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Total device dissipation FR-5 board (1) Storage temperature Operating temperature CONDITIONS Symbol V CBO V CEO V EBO I C P D T J T STG MIN. -55 -65 TYP. MAX. 60 40 6.0 200 +150 +150 UNIT V V V mA mW oC Maximum ratings (AT T =25 C unless otherwise noted) A o Junction to ambient R θJA 556 OC/W Mechanical data • • • • • Epoxy:UL94-V0 rated flame retardant Case : Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Mounting Position : Any Molded plastic, SOT-23 Weight : Approximated 0.008 gram P D Thermal resistance 225 1.8 T= 25 C A O Derate above 25 C O NPN Epitaxial Planar Transistor Formosa MS mW/ C O Total device dissipation alumina substrate(2) P D mW Junction to ambient R θJA 417 OC/W P D Thermal resistance 300 2.4 T= 25 C A O Derate above 25 C O mW/ C O 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. FMBT3904 Document ID Issued Date Revised Date Revision Page. SOT-23 Dimensions in inches and (millimeters) 0.035 (0.89) 0.051 (1.30) 0.063 (1.60) 0.047 (1.20) 0.108 (2.75) 0.083 (2.10) 0.027 (0.67) 0.013 (0.32) (A) (B) (C) DS-231106 2008/02/10 2011/07/21 E 11 |
同様の部品番号 - FMBT3904_11 |
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同様の説明 - FMBT3904_11 |
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