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FDDS100H06-F085 データシート(PDF) 6 Page - Bourns Electronic Solutions |
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FDDS100H06-F085 データシート(HTML) 6 Page - Bourns Electronic Solutions |
6 / 16 page ©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FDDS100H06_F085 Rev. 1.0.0 Application Information 1. Truth Table Sense current under fault conditions Input Level Output Level Status Normal operation L H L H H H Open load L H X1) H H L Short circuit to Vbb L H H H L 2) H (L 3) ) Short circuit to GND L H L L H L 4) Overtemperature L H L L L L Undervoltage L H L L H H (L 5) ) Overvoltage shutdown L H L L H H L = “ LOW “ Level, Z = High impedance, potential depends on external circuit, H = “HIGH” Level Notes: 1) Power TR off, high impedance. 2) An short of output to Vbb ,in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occure and VSTL signal may be errorious. 3) Low resistance to Vbb may be detected in ON-state by the no-load-detection. 4) Latched and reset by input. Low resistance to Vbb may be detected in ON-state by the no-load-detection. 5) Should reset IN to restart in case battery voltage comes back to normal operating range after undervoltage shutdown and status = “Low” level. 2.Terms RGND GND IN OUT Vbb IL IGND IIN IST Ibb ST Notes: |
同様の部品番号 - FDDS100H06-F085 |
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同様の説明 - FDDS100H06-F085 |
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