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CXA3090N データシート(PDF) 8 Page - Sony Corporation |
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CXA3090N データシート(HTML) 8 Page - Sony Corporation |
8 / 17 page —8— CXA3090N Unless otherwise specified, VCC=5 V, Ta=25 °C, fWD (Write data frequency) =5 MHz, IW=15 mA, LH (Head inductance) =1 µH, RH (Head DC resistance value) =30 Ω Refer to Fig. 2 to Fig. 4 No. 14 15-1 15-2 16-1 16-2 17 18 19 Item Head differential voltage amplitude Mode switching time Read to Write Mode switching time Write to Read Mode switching time safe to unsafe Mode switching time unsafe to safe Head switching time Write current propagation delay time Write current rise/fall time Measurement conditions Differential voltage between HX pin and HY pin at switching of Write current (open Head) TRW is the time required for Write current to turn to 90 % after Pin 23 changes from “High” to “Low”. TWR1 is the time required for the Read amplifier output∗ to turn to 90 % after Pin 23 changes from “Low” to “High”. TWR2 is the time required for Write current to decreases to 10 % after Pin 23 changes from “Low” to “High”. TSA1 is the time required for Pin 14 to turn “High” after the last transition of Write data when Write data is stopped in Write mode. TSA2 is the time required for Pin 14 to turn “Low” after the first transition of Write data in Write mode. TH is the time required for the Read amplifier output∗ to reach 90 % when the selected head switched in Read mode. TPD is the time required for Write current to reach 90 % after the Write data falling edge. LH=0 µH, RH=0 Ω TR is the time required for Write current to reach 90 % from 10 %; TF is the same time required Symbol VSW TRW TWR1 TWR2 TSA1 TSA2 TH TPD TR/TF Min. Typ. Max. Unit 5.8 6.8 Vp-p 0.2 0.4 µs 0.3 0.5 µs 0.2 0.4 µs 1.5 3 5 µs 0.6 µs 0.6 µs 2 7 ns 1 3 ns ∗Read amplifier output 100 mVp-p 10 MHz |
同様の部品番号 - CXA3090N |
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同様の説明 - CXA3090N |
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