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HUFA75639S3ST データシート(PDF) 1 Page - Fairchild Semiconductor |
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HUFA75639S3ST データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ©2012 Fairchild Semiconductor Corporation HUFA75639S3ST_F085A Rev. C1 HUFA75639S3ST_F085A 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Features • 56A, 100V • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. D G S JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) Data Sheet March 2012 NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75639S3ST. PART NUMBER PACKAGE BRAND HUFA75639S3ST_F085A TO263AB 75639S Ordering Information |
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