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ES-LPC185X データシート(PDF) 5 Page - NXP Semiconductors |
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ES-LPC185X データシート(HTML) 5 Page - NXP Semiconductors |
5 / 11 page ES_LPC185X_3X_2X_1X_FLASH All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Errata sheet Rev. 2.1 — 23 November 2012 5 of 11 NXP Semiconductors ES_LPC185x/3x/2x/1x Flash Errata sheet LPC185x/3x/2x/1x flash-based devices 3.2 EEPROM.1: Limited EEPROM retention and endurance Introduction: The LPC185x flash-based devices contain a 16384 byte EEPROM memory with endurance of > 100 k erase / program cycles. Problem: On the LPC185x flash-based LBGA devices with date code <1242, EEPROM endurance and retention may be less than specified. All newer devices will have fully tested EEPROMs. Work-around: Using longer EEPROM write times will increase retention. |
同様の部品番号 - ES-LPC185X |
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同様の説明 - ES-LPC185X |
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