FDT86102LZ datasheet(2/6 Pages) FAIRCHILD

部品番号	FDT86102LZ

部品情報	N-Channel PowerTrench짰 MOSFET 100 V, 6.6 A, 28 m廓

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FDT86102LZ Rev. C

Electrical Characteristics T

J = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

100

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25 °C

70

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 80 V, VGS = 0 V

1

μA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±10

μA

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 μA

1.0

1.4

3.0

V

ΔV

GS(th)

ΔT

J

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 μA, referenced to 25 °C

-6

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 6.6 A

22

28

m

Ω

VGS = 4.5 V, ID = 5.5 A

27

38

VGS = 10 V, ID = 6.6 A, TJ = 125 °C

36

46

gFS

Forward Transconductance

VDS = 5 V, ID = 6.6 A

26

S

Ciss

Input Capacitance

VDS = 50 V, VGS = 0 V,

f = 1MHz

1118

1490

pF

Coss

Output Capacitance

181

245

pF

Crss

Reverse Transfer Capacitance

7.5

15

pF

Rg

Gate Resistance

0.5

Ω

td(on)

Turn-On Delay Time

VDD = 50 V, ID = 6.6 A,

VGS = 10 V, RGEN = 6 Ω

6.6

14

ns

tr

Rise Time

1.9

10

ns

td(off)

Turn-Off Delay Time

19

31

ns

tf

Fall Time

2.2

10

ns

Qg(TOT)

Total Gate Charge

VGS = 0 V to 10 V

VDD = 50 V,

ID = 6.6 A

17

25

nC

Qg(TOT)

Total Gate Charge

VGS = 0 V to 4.5 V

8.3

12

Qgs

Gate to Source Charge

2.6

nC

Qgd

Gate to Drain “Miller” Charge

2.2

nC

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 6.6 A

(Note 2)

0.82

1.3

V

VGS = 0 V, IS = 1 A

(Note 2)

0.68

1.2

trr

Reverse Recovery Time

IF = 6.6 A, di/dt = 100 A/μs

40

64

ns

Qrr

Reverse Recovery Charge

36

58

nC

NOTES:

1. RθJA is determined with the device mounted on a 1 in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0 %.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V.

4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

55 °C/W when mounted on a

1 in2 pad of 2 oz copper

a)

118 °C/W when mounted on

a minimum pad of 2 oz copper

b)

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