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FQD4P25TM データシート(PDF) 2 Page - Fairchild Semiconductor |
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FQD4P25TM データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2011 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A4, Oct 2011 Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 46.6mH, IAS = -3.1A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -250 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.21 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -250 V, VGS = 0 V -- -- -1 µA VDS = -200 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.55 A -- 1.63 2.1 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.55 A -- 2.0 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 325 420 pF Coss Output Capacitance -- 65 85 pF Crss Reverse Transfer Capacitance -- 10 13 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -125 V, ID = -4.0 A, RG = 25 Ω -- 9.5 30 ns tr Turn-On Rise Time -- 60 130 ns td(off) Turn-Off Delay Time -- 14 40 ns tf Turn-Off Fall Time -- 27 65 ns Qg Total Gate Charge VDS = -200 V, ID = -4.0 A, VGS = -10 V -- 10.3 14 nC Qgs Gate-Source Charge -- 2.7 -- nC Qgd Gate-Drain Charge -- 5.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.1 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -12.4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.1 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -4.0 A, dIF / dt = 100 A/µs -- 140 -- ns Qrr Reverse Recovery Charge -- 0.64 -- µC |
同様の部品番号 - FQD4P25TM |
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同様の説明 - FQD4P25TM |
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