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FM22L16-55-TG データシート(PDF) 1 Page - Cypress Semiconductor

部品番号 FM22L16-55-TG
部品情報  4Mbit Asynchronous F-RAM Memory
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM22L16-55-TG データシート(HTML) 1 Page - Cypress Semiconductor

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This product conforms specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
May 2010
Page 1 of 14
FM22L16
4Mbit Asynchronous F-RAM Memory
Features
4Mbit Ferroelectric Nonvolatile RAM
Organized as 256Kx16
Configurable as 512Kx8 Using /UB, /LB
1014 Read/Write Cycles
NoDelay™ Writes
Page Mode Operation to 40MHz
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
JEDEC 256Kx16 SRAM Pinout
55 ns Access Time, 110 ns Cycle Time
Advanced Features
Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Low Power Operation
2.7V – 3.6V Power Supply
Low Current Mode (5µA) using ZZ pin
Low Active Current (8 mA typ.)
Industry Standard Configuration
Industrial Temperature -40
° C to +85° C
44-pin “Green”/RoHS TSOP-II package
Description
The FM22L16 is a 256Kx16 nonvolatile memory that
reads and writes like a standard SRAM. A
ferroelectric random access memory or F-RAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
and
system
design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and high write endurance make the
F-RAM superior to other types of memory.
In-system operation of the FM22L16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The F-RAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM22L16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM22L16 includes a low voltage monitor that
blocks access to the memory array when VDD drops
below VDD min. The memory is protected against an
inadvertent access and data corruption under this
condition. The device also features software-
controlled write protection. The memory array is
divided into 8 uniform blocks, each of which can be
individually write protected.
The device is available in a 400 mil 44-pin TSOP-II
surface mount package. Device specifications are
guaranteed over industrial temperature range –40°C
to +85°C.
Pin Configuration
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
A13
A14
DQ0
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ7
WE
VDD
A15
A16
A17
CE
A12
/ZZ
OE
A7
A6
A5
VSS
DQ12
DQ11
DQ8
DQ9
DQ10
LB
A8
A9
A10
A11
VDD
UB
DQ13
DQ14
DQ15
Ordering Information
FM22L16-55-TG
55 ns access, 44-pin
“Green”/RoHS TSOP-II
FM22L16-55-TGTR
55 ns access, 44-pin
“Green”/RoHS TSOP-II,
Tape & Reel


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