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FM22LD16-55-BG データシート(PDF) 9 Page - Cypress Semiconductor

部品番号 FM22LD16-55-BG
部品情報  4Mbit F-RAM Memory
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM22LD16-55-BG データシート(HTML) 9 Page - Cypress Semiconductor

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FM22LD16 - 256Kx16 FRAM
Rev. 3.0
Oct. 2012
Page 9 of 14
Read Cycle AC Parameters (TA = -40 C to + 85 C, VDD = 2.7V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Notes
tRC
Read Cycle Time
110
-
ns
tCE
Chip Enable Access Time
-
55
ns
tAA
Address Access Time
-
110
ns
tOH
Output Hold Time
20
-
ns
tAAP
Page Mode Address Access Time
-
25
ns
tOHP
Page Mode Output Hold Time
5
-
ns
tCA
Chip Enable Active Time
55
-
ns
tPC
Precharge Time
55
-
ns
tBA
/UB, /LB Access Time
-
20
ns
tAS
Address Setup Time (to /CE low)
0
-
ns
tAH
Address Hold Time (/CE-controlled)
55
-
ns
tOE
Output Enable Access Time
-
15
ns
tHZ
Chip Enable to Output High-Z
-
10
ns
1
tOHZ
Output Enable High to Output High-Z
-
10
ns
1
tBHZ
/UB, /LB High to Output High-Z
-
10
ns
1
Write Cycle AC Parameters (TA = -40 C to + 85 C, VDD = 2.7V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Notes
tWC
Write Cycle Time
110
-
ns
tCA
Chip Enable Active Time
55
-
ns
tCW
Chip Enable to Write Enable High
55
-
ns
tPC
Precharge Time
55
-
ns
tPWC
Page Mode Write Enable Cycle Time
25
-
ns
tWP
Write Enable Pulse Width
16
-
ns
tAS
Address Setup Time (to /CE low)
0
-
ns
tASP
Page Mode Address Setup Time (to /WE low)
8
-
ns
tAHP
Page Mode Address Hold Time (to /WE low)
15
-
ns
tWLC
Write Enable Low to /CE High
25
-
ns
tBLC
/UB, /LB Low to /CE High
25
-
ns
tWLA
Write Enable Low to A(17:2) Change
25
-
ns
tAWH
A(17:2) Change to Write Enable High
110
-
ns
tBS
/UB, /LB Setup Time (to /CE low)
2
-
ns
tBH
/UB, /LB Hold Time (to /CE high)
0
-
ns
tDS
Data Input Setup Time
14
-
ns
tDH
Data Input Hold Time
0
-
ns
tWZ
Write Enable Low to Output High Z
-
10
ns
1
tWX
Write Enable High to Output Driven
10
-
ns
1
tWS
Write Enable to /CE Low Setup Time
0
-
ns
2
tWH
Write Enable to /CE High Hold Time
0
-
ns
2
Notes
1
This parameter is characterized but not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. The parameters tWS and tWH
are not tested.
Capacitance (TA = 25 C , f=1 MHz, VDD = 3.3V)
Symbol
Parameter
Min
Max
Units
Notes
CI/O
Input/Output Capacitance (DQ)
-
8
pF
CIN
Input Capacitance
-
6
pF


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