データシートサーチシステム |
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FM22LD16-55-BG データシート(PDF) 9 Page - Cypress Semiconductor |
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FM22LD16-55-BG データシート(HTML) 9 Page - Cypress Semiconductor |
9 / 14 page FM22LD16 - 256Kx16 FRAM Rev. 3.0 Oct. 2012 Page 9 of 14 Read Cycle AC Parameters (TA = -40 C to + 85 C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes tRC Read Cycle Time 110 - ns tCE Chip Enable Access Time - 55 ns tAA Address Access Time - 110 ns tOH Output Hold Time 20 - ns tAAP Page Mode Address Access Time - 25 ns tOHP Page Mode Output Hold Time 5 - ns tCA Chip Enable Active Time 55 - ns tPC Precharge Time 55 - ns tBA /UB, /LB Access Time - 20 ns tAS Address Setup Time (to /CE low) 0 - ns tAH Address Hold Time (/CE-controlled) 55 - ns tOE Output Enable Access Time - 15 ns tHZ Chip Enable to Output High-Z - 10 ns 1 tOHZ Output Enable High to Output High-Z - 10 ns 1 tBHZ /UB, /LB High to Output High-Z - 10 ns 1 Write Cycle AC Parameters (TA = -40 C to + 85 C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes tWC Write Cycle Time 110 - ns tCA Chip Enable Active Time 55 - ns tCW Chip Enable to Write Enable High 55 - ns tPC Precharge Time 55 - ns tPWC Page Mode Write Enable Cycle Time 25 - ns tWP Write Enable Pulse Width 16 - ns tAS Address Setup Time (to /CE low) 0 - ns tASP Page Mode Address Setup Time (to /WE low) 8 - ns tAHP Page Mode Address Hold Time (to /WE low) 15 - ns tWLC Write Enable Low to /CE High 25 - ns tBLC /UB, /LB Low to /CE High 25 - ns tWLA Write Enable Low to A(17:2) Change 25 - ns tAWH A(17:2) Change to Write Enable High 110 - ns tBS /UB, /LB Setup Time (to /CE low) 2 - ns tBH /UB, /LB Hold Time (to /CE high) 0 - ns tDS Data Input Setup Time 14 - ns tDH Data Input Hold Time 0 - ns tWZ Write Enable Low to Output High Z - 10 ns 1 tWX Write Enable High to Output Driven 10 - ns 1 tWS Write Enable to /CE Low Setup Time 0 - ns 2 tWH Write Enable to /CE High Hold Time 0 - ns 2 Notes 1 This parameter is characterized but not 100% tested. 2 The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. The parameters tWS and tWH are not tested. Capacitance (TA = 25 C , f=1 MHz, VDD = 3.3V) Symbol Parameter Min Max Units Notes CI/O Input/Output Capacitance (DQ) - 8 pF CIN Input Capacitance - 6 pF |
同様の部品番号 - FM22LD16-55-BG |
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同様の説明 - FM22LD16-55-BG |
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