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FM23MLD16-60-BG データシート(PDF) 1 Page - Cypress Semiconductor

部品番号 FM23MLD16-60-BG
部品情報  8Mbit F-RAM Memory
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM23MLD16-60-BG データシート(HTML) 1 Page - Cypress Semiconductor

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This product conforms to the specifications per the terms of the Ramtron standard warranty.
Ramtron International Corporation
The product has completed Ramtron’s internal qualification testing and has reached
1850 Ramtron Drive, Colorado Springs, CO 80921
production status.
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 2.0
June 2012
Page 1 of 13
FM23MLD16
8Mbit F-RAM Memory
Features
8Mbit Ferroelectric Nonvolatile RAM
Organized as 512Kx16
Configurable as 1Mx8 Using /UB, /LB
High Endurance 100 Trillion (10
14) Read/Writes
NoDelay™ Writes
Page Mode Operation to 33MHz
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
JEDEC 512Kx16 SRAM Pinout
60 ns Access Time, 115 ns Cycle Time
Advanced Features
Low VDD Monitor Protects Memory against
Inadvertent Writes
Superior to Battery-backed SRAM Modules
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Low Power Operation
2.7V – 3.6V Power Supply
14 mA Active Current
Industry Standard Configuration
Industrial Temperature -40
° C to +85° C
48-pin “Green”/RoHS FBGA package
Description
The FM23MLD16 is a 512Kx16 nonvolatile memory
that reads and writes like a standard SRAM. A
ferroelectric random access memory or F-RAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
and
system
design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and very high write endurance
make F-RAM superior to other types of memory.
In-system operation of the FM23MLD16 is very
similar to other RAM devices and can be used as a
drop-in replacement for standard SRAM. Read and
write cycles may be triggered by a chip enable or
simply by changing the address. The F-RAM
memory is nonvolatile due to its unique ferroelectric
memory
process.
These
features
make
the
FM23MLD16
ideal
for
nonvolatile
memory
applications requiring frequent or rapid writes in the
form of an SRAM.
The FM23MLD16 includes a low voltage monitor
that blocks access to the memory array when VDD
drops below a critical threshold.
The memory is
protected against an inadvertent access and data
corruption under this condition.
The FM23MLD16 F-RAM is available in a 48-ball
FBGA surface mount package. Device specifications
are guaranteed over the industrial temperature range
of –40°C to +85°C.
48-Ball FBGA Top View (Ball Down)
/LB
/OE
A0
A1
A2
CE2
DQ8
/UB
A3
A4
/CE1
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
VSS
DQ11
A17
A7
DQ3
VDD
VDD
DQ12
NC
A16
DQ4
VSS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
NC
A12
A13
/WE
DQ7
A18A8
A9A10
A11
NC
12
3
4
56
A
B
C
D
E
F
G
H
Ordering Information
FM23MLD16-60-BG
60 ns access, 48-pin
“Green”/RoHS FBGA


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