MJ10020 datasheet(1/8 Pages) MOTOROLA

部品番号	MJ10020

部品情報	60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS

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Motorola Bipolar Power Transistor Device Data

Designer's™ Data Sheet

SWITCHMODE Series

NPN Silicon Power Darlington

Transistors with Base-Emitter

Speedup Diode

The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,

high–speed, power switching in inductive circuits where fall time is critical. They are

particularly suited for line operated switchmode applications such as:

• AC and DC Motor Controls

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Fast Turn–Off Times

150 ns Inductive Fall Time at 25

_C (Typ)

750 ns Inductive Storage Time at 25

_C (Typ)

• Operating Temperature Range –65 to +200_C

• 100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJ10020

MJ10021

Unit

Collector–Emitter Voltage

VCEO

200

250

Vdc

Collector–Emitter Voltage

VCEV

300

350

Vdc

Emitter Base Voltage

VEB

8.0

Vdc

Collector Current — Continuous

— Peak (1)

IC

ICM

60

100

Adc

Base Current — Continuous

— Peak (1)

IB

IBM

20

30

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25

_C

PD

250

143

1.43

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.7

_C/W

Maximum Lead Temperature for Soldering Purposes:

1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

v 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ10020/D

60 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

200 AND 250 VOLTS

250 WATTS

MJ10020

MJ10021

CASE 197A–05

TO–204AE (TO–3)

≈ 100

≈ 15

同様の部品番号 - MJ10020

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	MJ10020	211Kb / 4P	POWER TRANSISTORS(60A,200-250V,250W)
ON Semiconductor	MJ10020	293Kb / 8P	NPN SILICON POWER DARLINGTON TRANSISTORS 1995
New Jersey Semi-Conduct...	MJ10020	101Kb / 2P	NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
Continental Device Indi...	MJ10020	1Mb / 10P	NPN Silicon Power DarligtonTransistor with Base-Emitter Speedup Diode 60 AMPERE, 200 AND 250 VOLTS, 250 WATTS Rev0

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同様の説明 - MJ10020

メーカー	部品番号	データシート	部品情報
Motorola, Inc	MJ15023	144Kb / 4P	16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
	MJ10022	300Kb / 8P	40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
	MJ10015	217Kb / 6P	50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
ON Semiconductor	MJL21193	152Kb / 6P	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS January, 2007 ??Rev. 5
Motorola, Inc	MJH11017	212Kb / 6P	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
Continental Device Indi...	MJ10020	1Mb / 10P	NPN Silicon Power DarligtonTransistor with Base-Emitter Speedup Diode 60 AMPERE, 200 AND 250 VOLTS, 250 WATTS Rev0
Motorola, Inc	MJ3281A	221Kb / 6P	15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
	MJL21193	159Kb / 6P	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
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	MJ21193	173Kb / 6P	16 ampere complementary silicon power transistors 250 volts 250 watts