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Motorola Bipolar Power Transistor Device Data

Designer's™ Data Sheet

SWITCHMODE Series

NPN Silicon Power Transistor

The MJ13333 transistor is designed for high voltage, high–speed, power switching

in inductive circuits where fall time is critical. It is particularly suited for line operated

switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Fast Turn Off Times

200 ns Inductive Fall Time — 25

_C (Typ)

1.8

µs Inductive Storage Time — 25_C (Typ)

Operating Temperature Range – 65 to + 200

_C

100

_C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

400

Vdc

Collector–Emitter voltage

VCEV

700

Vdc

Emitter Base Voltage

VEB

6.0

Vdc

Collector Current — Continuous

Peak (1)

IC

ICM

20

30

Adc

Base Current — Continuous

Peak (1)

IB

IBM

10

15

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25

_C

PD

175

100

1.0

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.0

_C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

v10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ13333/D

20 AMPERE

NPN SILICON

POWER TRANSISTORS

400–500 VOLTS

175 WATTS

MJ13333

CASE 1–07

TO–204AA

(TO–3)

REV 1