MJ13333

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0)

VCEO(sus)

400

—

—

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)

ICEV

—

—

—

—

0.25

5.0

mAdc

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)

ICER

—

—

5.0

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

—

—

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 13

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 5.0 Adc, VCE = 5.0 Vdc)

hFE

10

—

60

—

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2.0 Adc)

(IC = 20 Adc, IB = 6.7 Adc)

(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C)

VCE(sat)

—

—

—

—

—

—

1.8

5.0

2.4

Vdc

Base Emitter Saturation Voltage

(IC = 10 Adc, IB = 2.0 Adc)

(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C)

VBE(sat)

—

—

—

—

1.8

1.8

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

Cob

125

—

500

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC = 10 A,

IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 µs,

Duty Cycle

v 2.0%)

td

—

0.02

0.1

µs

Rise Time

(VCC = 250 Vdc, IC = 10 A,

IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 µs,

Duty Cycle

v 2.0%)

tr

—

0.3

0.7

µs

Storage Time

IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 µs,

Duty Cycle

v 2.0%)

ts

—

1.6

4.0

µs

Fall Time

v 2.0%)

tf

—

0.3

0.7

µs

Inductive Load, Clamped (Table 1)

Storage Time

(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,

VBE(off) = 5 Vdc, TC = 100°C)

tsv

—

2.5

5.0

µs

Crossover Time

(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,

VBE(off) = 5 Vdc, TC = 100°C)

tc

—

0.8

2.0

µs

Storage Time

(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,

VBE(off) = 5 Vdc, TC = 25_C)

tsv

—

1.8

—

µs

Crossover Time

(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,

VBE(off) = 5 Vdc, TC = 25_C)

tc

—

0.4

—

µs

Fall Time

VBE(off) = 5 Vdc, TC = 25_C)

tfi

—

0.2

—

µs

(1) Pulse Test: PW = 300

µs, Duty Cycle v 2%.