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TC1501N データシート(PDF) 2 Page - Transcom, Inc. |
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TC1501N データシート(HTML) 2 Page - Transcom, Inc. |
2 / 4 page TC1501N REV4_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2 / 4 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source Voltage 12 V VGS Gate-Source Voltage -5 V IDS Drain Current IDSS Pin RF Input Power, CW 28 dBm PT Continuous Dissipation 3.8 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C CHIP DIMENSIONS S G G S S D D 600± ±± ± 12 470± ±± ± 12 Units: Micrometers Chip Thickness: 50 Gate Pad: 79 x 59.5 Drain Pad: 86.0 x 76.0 Source Pad: 80 x 86 CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290 °C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220 °C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TYPICAL SCATTERING PARAMETERS (TA=25 °°°°C) V DS = 8 V, IDS = 240 mA |
同様の部品番号 - TC1501N |
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同様の説明 - TC1501N |
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