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AD8022ARM データシート(PDF) 4 Page - Analog Devices

部品番号 AD8022ARM
部品情報  Dual High-Speed Low-Noise Op Amps
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メーカー  AD [Analog Devices]
ホームページ  http://www.analog.com
Logo AD - Analog Devices

AD8022ARM データシート(HTML) 4 Page - Analog Devices

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AD8022
–4–
REV. 0
ORDERING GUIDE
Temperature
Package
Package
Model
Range
Description
Option
AD8022AR
–40
°C to +85°C
8-Lead Plastic SOIC
SO-8
AD8022ARM
–40
°C to +85°C
8-Lead microSOIC
RM-8
AD8022AR-EVAL
Evaluation Board
SO-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8022 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
AMBIENT TEMPERATURE – C
2.0
–50
1.5
1.0
0.5
0
–40 –30 –20 –10 0
10
20 30
40 50
60 70
80 90
TJ = 150 C
8-LEAD SOIC PACKAGE
8-LEAD MICROSOIC
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 1.6 W
microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 1.2 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±0.8 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range RM, R . . . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . . . –40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for the device in free air:
8-Lead SOIC Package:
θ
JA = 160°C/W.
8-Lead microSOIC Package:
θ
JA = 200°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8022
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150
°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change
in the stresses exerted on the die by the package. Exceeding a
junction temperature of 175
°C for an extended period can result
in device failure.
While the AD8022 is internally short circuit protected, this may not
be sufficient to guarantee that the maximum junction temperature
(150
°C) is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derat-
ing curves.


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