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X00619MA2AL2 データシート(PDF) 4 Page - STMicroelectronics

部品番号 X00619MA2AL2
部品情報  0.8 A sensitive gate SCR
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

X00619MA2AL2 データシート(HTML) 4 Page - STMicroelectronics

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Characteristics
X00619
4/10
Doc ID 15755 Rev 2
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 6.
Relative variation of gate trigger,
holding and latching current versus
junction temperature
Z/R
th(j-a)
th(j-a)
0.01
0.10
1.00
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
SOT-223
SCU= 5 cm²
TO-92
SCU= 0.5 cm²
t (s)
p
I,I ,I [T ] /
GTHL
j
I
,I ,I [T =25°C]
GTHL
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-40
-20
0
20
40
60
80
100
120
IGT
IH and IL
Typical values
T (°C)
j
Figure 7.
Relative variation of holding
current versus gate-cathode
resistance (typical values)
Figure 8.
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
I [R
] / I [
=1k ]
HGK
H
Ω
RGK
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
R(k )
GK
Ω
dV/dt[R
] / dV/dt[
=1k ]
GK
Ω
RGK
0.1
1.0
10.0
100.0
1.0E-01
1.0E+00
1.0E+01
VD= 0.67xVDRM
R(k )
GK
Ω
Figure 9.
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
Figure 10.
Surge peak on-state current versus
number of cycles
dV/dt[C
] / dV/dt[
=1k ]
GK
Ω
RGK
1
10
100
1
10
VD= 0.67xVDRM
Rgk = 1 kΩ
C
(nF)
GK
0
1
2
3
4
5
6
7
8
9
10
1
10
100
1000
Non repetitive
Tj initial=25 °C
Repetitive
Tl= 25 °C
One cycle
tp=10ms
Number of cycles
I
(A)
TSM


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