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AZV832MTR-G1 データシート(PDF) 5 Page - BCD Semiconductor Manufacturing Limited |
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AZV832MTR-G1 データシート(HTML) 5 Page - BCD Semiconductor Manufacturing Limited |
5 / 27 page Preliminary Datasheet Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifiers Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 5 AZV831/2 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage VCC 6.0 V Differential Input Voltage VID 6.0 V Input Voltage VIN -0.3 to VCC+0.5 V Operating Junction Temperature TJ 150 ºC Thermal Resistance (Junction to Ambient) θJA SC-70-5 270 ºC /W SOT-23-5 220 SOIC-8 150 MSOP-8 200 Storage Temperature Range TSTG -65 to 150 ºC Lead Temperature (Soldering,10 Seconds) TLEAD 260 ºC ESD (Human Body Model) 4000 V ESD (Machine Model) 300 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage VCC 1.6 5.5 V Operation Ambient Temperature Range TA -40 85 ºC |
同様の部品番号 - AZV832MTR-G1 |
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同様の説明 - AZV832MTR-G1 |
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