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FDN8601 データシート(PDF) 3 Page - Fairchild Semiconductor |
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FDN8601 データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C www.fairchildsemi.com 3 Typical Characteristics T J = 25 °C unless otherwise noted Figure 1. 01 23 45 0 3 6 9 12 V GS = 7 V V GS = 6 V V GS = 10 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX V GS = 5 V V GS = 8 V V DS, DRAIN TO SOURCE VOLTAGE (V) On-Region Characteristics Figure 2. 0 369 12 0 1 2 3 4 5 V GS = 5 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) V GS = 7 V V GS = 8 V V GS = 6 V V GS = 10 V Normalized On-Resistance vs Drain Current and Gate Voltage Figure 3. Normalized On- Resistance -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID = 1.5 A VGS = 10 V TJ, JUNCTION TEMPERATURE (oC) vs Junction Temperature Figure 4. 45 67 8 9 10 0 100 200 300 400 500 TJ = 125 oC ID = 1.5 A TJ = 25 oC VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX On-Resistance vs Gate to Source Voltage Figure 5. Transfer Characteristics 23 456 78 0 3 6 9 12 TJ = 25 oC TJ = 150 oC VDS = 5 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX TJ = -55 oC VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 20 TJ = -55 oC TJ = 25 oC TJ = 150 oC VGS = 0 V VSD, BODY DIODE FORWARD VOLTAGE (V) Source to Drain Diode Forward Voltage vs Source Current |
同様の部品番号 - FDN8601 |
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