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BCP54 データシート(PDF) 1 Page - Fairchild Semiconductor |
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BCP54 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page NPN General Purpose Amplifier Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted BCP54 This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C B C C SOT-223 E Symbol Characteristic Max Units BCP54 PD Total Device Dissipation Derate above 25 °C 1.5 12 W mW/ °C RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W Discrete POWER & Signal Technologies ã 1997 Fairchild Semiconductor Corporation |
同様の部品番号 - BCP54 |
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同様の説明 - BCP54 |
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