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BUZ900P データシート(PDF) 2 Page - Seme LAB |
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BUZ900P データシート(HTML) 2 Page - Seme LAB |
2 / 4 page TEC MAGNA Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 BUZ900P BUZ901P Characteristic Test Conditions Min. Typ. Max. Unit BVDSX Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage VGS(OFF) Gate – Source Cut–Off Voltage VDS(SAT)* Drain – Source Saturation Voltage IDSX Drain – Source Cut–Off Current yfs* Forward Transfer Admittance 160 200 ±14 0.15 1.5 12 10 10 0.7 2 * Pulse Test: Pulse Width = 300 µs , Duty Cycle ≤ 2%. VGS = –10V BUZ900P ID = 10mA BUZ901P VDS = 0 IG = ±100µA VDS = 10V ID = 100mA VGD = 0 ID =8A VDS = 160V BUZ900P VGS = –10V VDS = 200V BUZ901P VDS = 10V ID = 3A V V V V mA S Characteristic Test Conditions Min. Typ. Max. Unit Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn–on Time toff Turn-off Time 500 300 10 100 50 VDS = 10V f = 1MHz VDS = 20V ID = 5A pF ns STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T — CASE TEMPERATURE (˚C) C Derating Chart |
同様の部品番号 - BUZ900P |
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同様の説明 - BUZ900P |
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