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FDC6305 データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDC6305 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDC6305N, Rev. C Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R = 180°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0 1 2 3 4 5 00.5 11.522.5 3 3.5 4 Qg, GATE CHARGE (nC) ID = 2.7A VDS = 5V 10V 15V 0 100 200 300 400 500 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V 0.01 0.1 1 10 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 10ms 1ms 100 µs RDS(ON) LIMIT VGS = 4.5V SINGLE PULSE RθJA = 180 oC/W TA = 25 oC 0 1 2 3 4 5 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 180 o C/W TA = 25 o C |
同様の部品番号 - FDC6305 |
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同様の説明 - FDC6305 |
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