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FDC6506P データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDC6506P データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDC6506P Rev. C Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 T - T = P * R (t) θJA A J P(pk) t1 t 2 R (t) = r(t) * R R =180°C/W θJA θJA θJA 0.01 0.1 1 10 100 300 0 1 2 3 4 5 SINGLE PULSE TIME (SEC) SINGLE PULSE R =180°C/W T = 25°C θJA A 0.1 0.2 0.5 1 2 5 10 20 50 0.01 0.03 0.1 0.3 1 3 10 30 -V , DRAIN-SOURCE VOLTAGE (V) RDS( ON) LI MI T DS V = -10V SINGLE PULSE R = 180°C/W T = 25°C θJA GS A DC 1s 100ms 10ms 1ms 100us 0 2 4 6 8 10 0 123 4 Qg, GATE CHARGE (nC) ID= -1.8A VDS=-5.0V -10V -15V 0 60 120 180 240 300 0 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Coss Crss f=1MHz VGS=0V |
同様の部品番号 - FDC6506P |
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同様の説明 - FDC6506P |
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