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FDC658P データシート(PDF) 3 Page - Fairchild Semiconductor |
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FDC658P データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDC658P Rev.C 0 1 2 3 4 0 4 8 12 16 20 -V , DRAIN-SOURCE VOLTAGE (V) DS -4.5V -4.0V -6.0V -3.5V -3.0V V = -10V GS 0 4 8 12 16 20 0.8 1 1.2 1.4 1.6 1.8 2 - I , DRAIN CURRENT (A) V = -4.0 V GS D -10.0V -4.5V -6.0V -8.0V -5.0V Typical Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. Figure 5. Transfer Characteristics. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 10 20 -V , BODY DIODE FORWARD VOLTAGE (V) 25°C -55°C V = 0V GS SD T = 125°C J Figure 4. On-Resistance Variation with Gate-to-Source Voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) J V = -10V GS I = -4A D 2 4 6 8 10 0 0.04 0.08 0.12 0.16 -V , GATE TO SOURCE VOLTAGE (V) GS I = -2A D T = 125°C J T = 25°C J 1 2 3 4 5 6 0 4 8 12 16 20 -V , GATE TO SOURCE VOLTAGE (V) V = -5V DS GS T = -55°C J 125°C 25°C Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
同様の部品番号 - FDC658P |
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同様の説明 - FDC658P |
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