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FDD3690 データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDD3690 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDD3690 Rev. C(W) Typical Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) I D = 5.4 A V DS = 20V 50 V 30V 0 500 1000 1500 2000 2500 0 10 20304050 VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS CRSS COSS f = 1MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 µs R DS(ON) LIMIT V GS = 10V SINGLE PULSE RθJA = 96 oC/W T A = 25 oC 10ms 1ms 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 t1, TIME (SEC) SINGLE PULSE RθJA = 96 oC/W T A = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 96 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
同様の部品番号 - FDD3690 |
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同様の説明 - FDD3690 |
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