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FDG6306P データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDG6306P データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page February 2001 ©2001 Fairchild Semiconductor Corporation FDG6306P Rev C(W) FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Battery management • Load switch Features • –0.6 A, –20 V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 m Ω @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package S G D D G S Pin 1 SC70-6 S G D D G S 6 or 3 5 or 2 4 or 1 1 or 4 2 or 5 3 or 6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous (Note 1) –0.6 A – Pulsed –2.0 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .06 FDG6306P 7’’ 8mm 3000 units |
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同様の説明 - FDG6306P |
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