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SZNUP2105LT3G データシート(PDF) 5 Page - ON Semiconductor

部品番号 SZNUP2105LT3G
部品情報  Dual Line CAN Bus Protector
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SZNUP2105LT3G データシート(HTML) 5 Page - ON Semiconductor

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5
EMI Specifications
The EMI protection level provided by the TVS device can
be measured using the International Organization for
Standardization (ISO) 7637−1 and −3 specifications that are
representative of various noise sources. The ISO 7637−1
specification is used to define the susceptibility to coupled
transient noise on a 12 V power supply, while ISO 7637−3
defines the noise immunity tests for data lines. The ISO 7637
tests also verify the robustness and reliability of a design by
applying the surge voltage for extended durations.
The IEC 61000−4−X specifications can also be used to
quantify the EMI immunity level of a CAN system. The IEC
61000−4 and ISO 7637 tests are similar; however, the IEC
standard was created as a generic test for any electronic
system, while the ISO 7637 standard was designed for
vehicular applications. The IEC61000−4−4 Electrical Fast
Transient (EFT) specification is similar to the ISO 7637−1
pulse 1 and 2 tests and is a requirement of SDS CAN
systems. The IEC 61000−4−5 test is used to define the power
absorption capacity of a TVS device and long duration
voltage transients such as lightning. Table 2 provides a
summary of the ISO 7637 and IEC 61000−4−X test
specifications. Table 3 provides the NUP2105L’s ESD
test results.
Table 2. ISO 7637 and IEC 61000−4−X Test Specifications
Test
Waveform
Test Specifications
NUP2105L Test
Simulated Noise Source
ISO 7637−1
12 V Power Supply Lines
Pulse 1
Vs = 0 to −100 V
Imax = 10 A
tduration = 5000 pulses
Imax = 1.75 A
Vclamp_max = 31 V
tduration = 5000 pulses
Ri = 10 W, tr = 1.0 ms,
td_10% = 2000 ms, t1 = 2.5 s,
t2 = 200 ms, t3 = 100 ms
DUT in parallel with
inductive load that is
disconnected from power
supply.
Pulse 2
Vs = 0 to +100 V
Imax = 10 A
tduration = 5000 pulses
Imax = 9.5 A
Vclamp_max = 33 V
tduration = 5000 pulses
Ri = 10 W, tr = 1.0 ms,
td_10% = 50 ms, t1 = 2.5 s,
t2 = 200 ms
DUT in series with inductor
that is disconnected.
ISO 7637−3
Data Line EFT
Pulse ‘a’
Vs = −60 V
Imax = 1.2 A
tduration = 10 minutes
Imax = 50 A
Vclamp_max = 40 V
tduration = 60 minutes
Ri = 50 W, tr = 5.0 ns,
td_10% = 0.1 ms, t1 = 100 ms,
t2 = 10 ms, t3 = 90 ms
Switching noise of inductive
loads.
Pulse ‘b’
Vs = +40 V
Imax = 0.8 A
tduration = 10 minutes
IEC 61000−4−4
Data Line EFT
Vopen circuit = 2.0 kV
Ishort circuit = 40 A
(Level 4 = Severe Industrial
Environment)
Ri = 50 W, tr < 5.0 ns,
td_50% = 50 ns, tburst = 15 ms,
fburst = 2.0 to 5.0 kHz,
trepeat = 300 ms
tduration = 1 minute
(Note 2)
Switching noise of inductive
loads.
IEC 61000−4−5
Vopen circuit = 1.2 x 50 ms,
Ishort circuit = 8 x 20 ms
Ri = 50 W
Lightning, nonrepetitive
power line and load
switching
1. DUT = device under test.
2. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of
ISO 7637−3.
Table 3. NUP2105L ESD Test Results
ESD Specification
Test
Test Level
Pass / Fail
Human Body Model
Contact
16 kV
Pass
IEC 61000−4−2
Contact
30 kV (Note 3)
Pass
Non−contact (Air Discharge)
30 kV (Note 3)
Pass
3. Test equipment maximum test voltage is 30 kV.


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