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KSE350S データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 KSE350S
部品情報  High Voltage General Purpose Applications
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSE350S データシート(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A1, December 2000
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 300
V
VCEO
Collector-Emitter Voltage
- 300
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current
- 500
mA
PC
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = - 1mA, IB = 0
-300
V
ICBO
Collector Cut-off Current
VCB = - 300V, IE = 0
-100
µA
IEBO
Emitter Cut-off Current
VBE = - 3V, IC = 0
-100
µA
hFE
DC Current Gain
VCE = - 10V, IC = - 50mA
30
240
KSE350
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to KSE340
1
TO-126
1. Emitter
2.Collector
3.Base


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