データシートサーチシステム |
|
LM1117IMPX-3.3 データシート(PDF) 2 Page - Texas Instruments |
|
LM1117IMPX-3.3 データシート(HTML) 2 Page - Texas Instruments |
2 / 30 page LM1117-N SNOS412L – MAY 2004 – REVISED JULY 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Block Diagram Connection Diagrams Figure 2. SOT-223 Top View Figure 3. TO-220 Top View Figure 4. TO-252 Top View 2 Submit Documentation Feedback Copyright © 2004–2012, Texas Instruments Incorporated Product Folder Links: LM1117-N |
同様の部品番号 - LM1117IMPX-3.3 |
|
同様の説明 - LM1117IMPX-3.3 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |