FDT458P Rev. B(W)

Typical Characteristics

0

2

4

6

8

10

0

1

2

3

4

5

Q

g

, GATE CHARGE (nC)

I

D

= -3.4A

V

DS

= -5V

-10V

-15V

0

50

100

150

200

250

300

0

5

10

15

20

25

30

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

C

OSS

C

RSS

f = 1 MHz

V

GS

= 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

-V

DS

, DRAIN-SOURCE VOLTAGE (V)

DC

1s

100ms

100

µ s

R

V

SINGLE PULSE

T

A

10ms

1m

10s

0

40

80

120

160

200

0.0001

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

T

A

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.001

0.01

0.1

1

10

100

1000

t

P(pk)

Single Pulse

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.