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FDT458P データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDT458P データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDT458P Rev. B(W) Typical Characteristics 0 2 4 6 8 10 0 1 2 3 4 5 Q g , GATE CHARGE (nC) I D = -3.4A V DS = -5V -10V -15V 0 50 100 150 200 250 300 0 5 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µ s R DS(ON) LIMIT V GS = -10V SINGLE PULSE RθJA = 110 oC/W T A = 25oC 10ms 1m 10s 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE R θJA = 110 oC/W T A = 25oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , TIME (sec) RθJA(t) = r(t) + R θJA RθJA = 110 °C/W TJ - T A = P * R θJA (t) Duty Cycle, D = t 1 / t2 P(pk) t 1 t2 Single Pulse 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
同様の部品番号 - FDT458P |
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同様の説明 - FDT458P |
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