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LM185H-1.2 データシート(PDF) 2 Page - Texas Instruments |
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LM185H-1.2 データシート(HTML) 2 Page - Texas Instruments |
2 / 23 page LM185-1.2-N, LM285-1.2-N, LM385-1.2-N SNVS742E – JANUARY 2000 – REVISED APRIL 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Reverse Current 30mA Forward Current 10mA Operating Temperature Range (4) LM185-1.2-N −55°C to +125°C LM285-1.2-N −40°C to +85°C LM385-1.2-N 0°C to 70°C ESD Susceptibility (5) 2kV Storage Temperature −55°C to +150°C Soldering Information TO-92 package: 10 sec. 260°C TO package:10 sec. 300°C SOIC and SOT-23 Pkg. Vapor phase (60 sec.) 215°C Infrared (15 sec.) 220°C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics. The specifications apply only for the test conditions listed. (2) Refer to RETS185H-1.2 for military specifications. (3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications. (4) For elevated temperature operation, see Table 1. (5) The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. Table 1. TJ(max) for Elevated Temperature Operation DEVICE TJ(max) (°C) LM185-1.2-N 150 LM285-1.2-N 125 LM385-1.2-N 100 2 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LM185-1.2-N LM285-1.2-N LM385-1.2-N |
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