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TYNx12TRG データシート(PDF) 4 Page - STMicroelectronics

部品番号 TYNx12TRG
部品情報  Sensitive and standard 12 A SCRs
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TYNx12TRG データシート(HTML) 4 Page - STMicroelectronics

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Characteristics
TN1215, TS1220, TYN612, TYN812, TYN1012
4/13
Doc ID 7475 Rev 7
Figure 3.
Average and D.C. on-state current
versus ambient temperature
(DPAK)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
(A)
T(AV)
T
(°C)
amb
α = 180°
D.C.
DPAK
2
DPAK
Device mounted on FR4 with
recommended pad layout
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
K=[Z
/R
th(j-c)
th(j-c)]
t (s)
p
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
Figure 6.
Relative variation of gate trigger
and holding current versus junction
temperature for TS1220 series
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
K=[Z
/R
th(j-a)
th(j-a)]
t (s)
p
DPAK
TO-220AB / IPAK
DPAK
2
Device mounted on FR4 with
recommended pad layout
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T (°C)
j
I,I ,I [T ] /
GTHL
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH & I
R
= 1k
L
GK
Ω
Figure 7.
Relative variation of gate trigger
and holding current versus junction
temperature
Figure 8.
Relative variation of holding
current versus gate-cathode
resistance (typical values)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I,I ,I [T ] /
GTHL
j
I
,I ,I [T =25°C]
GTHL
j
T (°C)
j
IGT
IH & IL
TN1215 and TYNx12 Series
1E-2
1E-1
1E+0
1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R(k )
GK
Ω
I [R
] / I [
=1k ]
HGK
H
Ω
RGK
Tj = 25°C
TS1220 Series


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