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FJV4103R データシート(PDF) 1 Page - Fairchild Semiconductor |
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FJV4103R データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10µA, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100µA, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 µA hFE DC Current Gain VCE= -5V, IC= -5mA 56 VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -0.3 V fT Current Gain Bandwidth Product VCE= -10V, IC= -5mA 200 MHz Cob Output Capacitance VCB= -10V, IE=0 f=1.0MHz 5.5 pF VI(off) Input Off Voltage VCE= -5V, IC= -100µA-0.5 V VI(on) Input On Voltage VCE= -0.3V, IC= -5mA -3.0 V R1 Input Resistor 15 22 29 K Ω R1/R2 Resistor Ratio 0.9 1 1.1 FJV4103R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV3103R Equivalent Circuit B E C R1 R2 R7 3 Marking SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 |
同様の部品番号 - FJV4103R |
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同様の説明 - FJV4103R |
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