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STP13N95K3 データシート(PDF) 5 Page - STMicroelectronics

部品番号 STP13N95K3
部品情報  N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP13N95K3 データシート(HTML) 5 Page - STMicroelectronics

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STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Electrical characteristics
Doc ID15685 Rev 3
5/19
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 475 V, ID = 5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 22)
-
18
16
50
21
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
-
10
40
mA
A
VSD
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD= 10 A, VGS=0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 10 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 21)
-
500
9
36
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 10 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see
Figure 21)
-
624
11
37
ns
µC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-source breakdown voltage Igs ± 1mA, (open drain)
30
-
V


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