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STP13N95K3 データシート(PDF) 5 Page - STMicroelectronics |
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STP13N95K3 データシート(HTML) 5 Page - STMicroelectronics |
5 / 19 page STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Electrical characteristics Doc ID15685 Rev 3 5/19 The built-in-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 475 V, ID = 5 A, RG=4.7 Ω, VGS=10 V (see Figure 22) - 18 16 50 21 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed) - 10 40 mA A VSD (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD= 10 A, VGS=0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 10 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 21) - 500 9 36 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 10 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 21) - 624 11 37 ns µC A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs ± 1mA, (open drain) 30 - V |
同様の部品番号 - STP13N95K3 |
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同様の説明 - STP13N95K3 |
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