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FMBA0656 データシート(PDF) 2 Page - Fairchild Semiconductor |
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FMBA0656 データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page V 1.2 Ic = 100 mA, Vce = 1 V Base-Emitter On Voltage VBE(on) V 0.25 Ic = 100 mA, Ib = 10 mA Collector-Emitter Saturation Voltage VCE(sat) - 100 100 Vce = 1 V, Ic = 10 mA Vce = 1 V, Ic = 100 mA DC Current Gain hFE nA 100 Vce = 60 V Collector Cutoff Current ICEO nA 100 Vcb = 80 V Collector Cutoff Current ICBO Units Max Min Test Conditions Parameter Symbol NPN & PNP Complementary Dual Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted Small - Signal Characteristics - 50 Vce = 1 V, Ic = 100 mA, f = 100 MHz Current Gain - Bandwidth Product fT © 1997 Fairchild Semiconductor Corporation Page 2 of 2 fmba0656.lwpPr33&73(Y3) |
同様の部品番号 - FMBA0656 |
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同様の説明 - FMBA0656 |
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