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データシートサーチシステム |
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FQA9P25 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FQA9P25 データシート(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  ©2000 Fairchild Semiconductor International December 2000 Rev. A2, December 2000 QFET QFET QFET QFETTM FQA9P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. Features • -10.5A, -250V, RDS(on) = 0.62Ω @VGS = -10 V • Low gate charge ( typical 29 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQA9P25 Units VDSS Drain-Source Voltage -250 V ID Drain Current - Continuous (TC = 25°C) -10.5 A - Continuous (TC = 100°C) -6.6 A IDM Drain Current - Pulsed (Note 1) -42 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ IAR Avalanche Current (Note 1) -10.5 A EAR Repetitive Avalanche Energy (Note 1) 15 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns PD Power Dissipation (TC = 25°C) 150 W - Derate above 25°C 1.2 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.83 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! S D G TO-3P FQA Series G S D |
同様の部品番号 - FQA9P25 |
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同様の説明 - FQA9P25 |
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